ترانزیستور L2203NS

ترانزیستور L2203NS

کاتالوگ محصول : دیتاشیت ترانزیستور L2203NS

HEXFET Power MOSFET

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistanceper silicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.

 Features:

• Advanced Process TechnologyAdvanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• 100% RG Tested
• Lead-Free