ترانزیستور NGB8204N

ترانزیستور NGB8204N

کاتالوگ محصول: دیتاشیت ترانزیستور NGB8204N

Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (RGE)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices