آی سی BUK7L11

آی سی BUK7L11 

کاتالوگ محصول : دیتاشیت آی سی BUK7L11 

Trench PLUS standard level FET

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching.

Features:

• ESD and overvoltage protection
• Q101 compliant
• Internal gate resistor
• On-state resistance 8 mΩ (typ).