Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety of powerapplications. With these improvements, multiple devicescan be used in an application with dramatically reducedboard space. The package is designed for vapor phase,infra red, or wave soldering techniques. Power dissipationof greater than 0.8W is possible in a typical PCB mountapplication.
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