آی سی IRF7341Q

آی سی IRF7341Q

آی سی IRF7341Q در حقیقت از دو عدد MOSFET منفی تشکیل شده است و در بیشتر کنترل یونیت های خودرو های کیا و هیوندای به عنوان راه انداز سوزن انزکتور به کار رفته است . همچنین از این آی سی در یونیت ABS و ایربگ خودرو نیز استفاده می شود . 

کاتالوگ محصول : دیتاشیت آی سی IRF7341Q

HEXFET Power MOSFET

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Features

• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag 
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax