آی سی IPS022G

The IPS022G are fully protected dual low side SMARTPOWER MOSFETs respectively.They feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices com bine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switch- ing times and provides efficient protection by turning OFF the power MOSFET when the temperature ex- ceeds 165^oC or when the drain current reaches 5A.These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most in ductive load demagnetizations.